Observation of nonequilibrium longitudinal optical phonons in InN and its implications
Identifieur interne : 00A477 ( Main/Repository ); précédent : 00A476; suivant : 00A478Observation of nonequilibrium longitudinal optical phonons in InN and its implications
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Abstract
Nonequilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the band gap of InN cannot be around 1.89 eV; but are consistent with a band gap of about 0.8 eV. In addition, they disprove the idea that 0.8 eV luminescence observed recently in InN is due to deep level radiative emission in InN. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Observation of nonequilibrium longitudinal optical phonons in InN and its implications</title>
<author><name sortKey="Liang, W" uniqKey="Liang W">W. Liang</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arizona</region>
</placeName>
<wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arizona</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Tsen, K T" uniqKey="Tsen K">K. T. Tsen</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arizona</region>
</placeName>
<wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Ferry, D K" uniqKey="Ferry D">D. K. Ferry</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arizona</region>
</placeName>
<wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Lu, Hai" uniqKey="Lu H">Hai Lu</name>
</author>
<author><name sortKey="Schaff, William J" uniqKey="Schaff W">William J. Schaff</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0197892</idno>
<date when="2004-05-10">2004-05-10</date>
<idno type="stanalyst">PASCAL 04-0197892 AIP</idno>
<idno type="RBID">Pascal:04-0197892</idno>
<idno type="wicri:Area/Main/Corpus">00B942</idno>
<idno type="wicri:Area/Main/Repository">00A477</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deep energy levels</term>
<term>Energy gap</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Phonon spectra</term>
<term>Photoluminescence</term>
<term>Raman spectra</term>
<term>Time resolved spectra</term>
<term>Wide band gap semiconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7830F</term>
<term>7866F</term>
<term>6320D</term>
<term>7855C</term>
<term>7847</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur bande interdite large</term>
<term>Spectre Raman</term>
<term>Bande interdite</term>
<term>Photoluminescence</term>
<term>Niveau énergie profond</term>
<term>Spectre résolution temporelle</term>
<term>Spectre phonon</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Nonequilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the band gap of InN cannot be around 1.89 eV; but are consistent with a band gap of about 0.8 eV. In addition, they disprove the idea that 0.8 eV luminescence observed recently in InN is due to deep level radiative emission in InN. © 2004 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>84</s2>
</fA05>
<fA06><s2>19</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Observation of nonequilibrium longitudinal optical phonons in InN and its implications</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LIANG (W.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TSEN (K. T.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FERRY (D. K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LU (Hai)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SCHAFF (William J.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1>
</fA14>
<fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>3849-3851</s1>
</fA20>
<fA21><s1>2004-05-10</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2004 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>04-0197892</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Nonequilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the band gap of InN cannot be around 1.89 eV; but are consistent with a band gap of about 0.8 eV. In addition, they disprove the idea that 0.8 eV luminescence observed recently in InN is due to deep level radiative emission in InN. © 2004 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H30F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60C20D</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B70H47</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7830F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6320D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>7847</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Spectre Raman</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Raman spectra</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Bande interdite</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Energy gap</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Niveau énergie profond</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Deep energy levels</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Time resolved spectra</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Spectre phonon</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Phonon spectra</s0>
</fC03>
<fN21><s1>131</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0418M000043</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
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